Larger hybridization bandgaps and topological phase transitions in the Sb-based topological insulator superlattices

With the aim of achieving a higher hybridization bandgap in quantum spin Hall insulating heterostructures, we study topologically novel InAs/Ga x In 1− Sb superlattices with inverted bandstructure. By tuning strain and material composition each layer precise manner, enhancement is achieved. The theoretically calculated hybridized reaches it's highest value ∼ 79 meV, which one reported so far. We also show that bilayer superlattice shows topological phase transition from trivial to semimetallic phase. These phases can be tuned by varying InAs thickness. All heterostructures showing large bandgaps are potential candidates for realization states at room temperature. • far achieved using Sb-based conventional superlattices. tunable transition. significant step temperature QSHI state.